Fabrication and optical properties of type-II InP/InAs nanowire/quantum-dot heterostructures

被引：17

作者：

Yan, Xin ^{[1
]}

Zhang, Xia ^{[1
]}

Li, Junshuai ^{[1
]}

Wu, Yao ^{[1
]}

Li, Bang ^{[1
]}

Ren, Xiaomin ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2016年 / 10卷 / 02期

基金：

北京市自然科学基金; 中国国家自然科学基金;

关键词：

nanowires; quantum dots; InAs; InP; heterostructures; type-II band alignment; photoluminescence; INAS QUANTUM DOTS; VAPOR-PHASE EPITAXY; GAAS NANOWIRES; GROWTH; INP; LASERS; RELAXATION; EXCITONS;

D O I：

10.1002/pssr.201510403

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth and optical properties of InAs quantum dots on a pure zinc blende InP nanowire are investigated. The quantum dots are formed in Stranski-Krastanov mode and exhibit pure zinc blende crystal structure. A substantial blueshift of the dots peak with a cube-root dependence on the excitation power is observed, suggesting a type-II band alignment. The peak position of dots initially red-shifts and then blue-shifts with increasing temperature, which is attributed to the carrier redistribution among the quantum dots. ((c) 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)

引用

收藏

页码：168 / 171

页数：4

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