Quasiballistic magnetization reversal

被引：136

作者：

Schumacher, HW

Chappert, C

Sousa, RC

Freitas, PP

Miltat, J

机构：

[1] Univ Paris 11, CNRS, Inst Elect Fondamentale, UMR 8622, F-91405 Orsay, France

[2] Inst Engn Sistemas & Computadores, P-1000 Lisbon, Portugal

[3] Univ Paris 11, CNRS, UMR 8502, Phys Solides Lab, F-91405 Orsay, France

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.90.017204

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate a quasiballistic switching of the magnetization in a microscopic magnetoresistive memory cell. By means of time resolved magnetotransport, we follow the large angle precession of the free layer magnetization of a spin valve cell upon application of transverse magnetic field pulses. Stopping the field pulse after a 180degrees precession rotation leads to magnetization reversal with reversal times as short as 165 ps. This switching mode represents the fundamental ultrafast limit of field induced magnetization reversal.

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页数：4

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