Electronic structures of organic/organic heterojunctions: From vacuum level alignment to Fermi level pinning

被引：99

作者：

Tang, J. X.

Lee, C. S. ^{[1
]}

Lee, S. T.

机构：

[1] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China

[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 06期

关键词：

D O I：

10.1063/1.2710297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electronic structures of organic/organic (O/O) heterojunctions have been studied by photoemission spectroscopy. We showed that vacuum level alignment is only valid for certain O/O heterojunctions rather than a general rule for organic junctions. The mode of energy level alignment is found to depend on the Fermi level position in the organic energy gap. In general, when the Fermi level is near the midgap position, vacuum level alignment at the O/O heterojunction is observed, whereas when the Fermi level is close to the edge of the lowest unoccupied or highest occupied molecular orbital level, Fermi level pinning accompanied by molecular orbital level bending is observed at the O/O heterojunction. (c) 2007 American Institute of Physics.

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