Silicon solar cells textured by low damage RIE with natural lithography

被引：3

作者：

Manshanden, P ^{[1
]}

Burgers, AR ^{[1
]}

Nositschka, WA ^{[1
]}

Voigt, O ^{[1
]}

Weeber, AW ^{[1
]}

机构：

[1] ECN Solar Energy, NL-1755 ZG Petten, Netherlands

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190524

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

RIE with natural lithography has two advantages over RIE with automasking: the process causes less surface damage and the process window is broader. We have systematically explored the parameter range of our process and identified a natural lithography RIE process which causes a minimum amount of surface damage. By using this RIE process and a wet chemical etch of a few nanometers, we reached a gain in shortcircuit current of, 2.9% and no loss in open circuit voltage. This resulted in an absolute efficiency gain of 0.6% for the RIE textured wafers.

引用

页码：324 / 327

页数：4