Microstructure of heteroepitaxial GaN revealed by x-ray diffraction

被引：371

作者：

Chierchia, R ^{[1
]}

Böttcher, T ^{[1
]}

Heinke, H ^{[1
]}

Einfeldt, S ^{[1
]}

Figge, S ^{[1
]}

Hommel, D ^{[1
]}

机构：

[1] Univ Bremen, Inst Festkorperphys, D-28334 Bremen, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 11期

关键词：

D O I：

10.1063/1.1571217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mosaicity of GaN layers grown by metalorganic vapor phase epitaxy, on (0001) sapphire and exhibiting different grain diameters is studied using high-resolution x-ray diffraction. The coherence lengths, the tilt and the twist of the mosaic structure are determined utilizing data taken in different x-ray scattering geometries. The results of different models, which were applied, are then compared and discussed. The dislocation densities, obtained from the x-ray data, are compared with the results of plan-view transmission electron microscopy and atomic force microscopy. (C) 2003 American Institute of Physics.

引用

页码：8918 / 8925

页数：8

共 26 条

[1] Heteroepitaxy of group III nitrides for device applications [J].

Amano, H ;

Takeuchi, T ;

Sakai, H ;

Yamaguchi, S ;

Wetzel, C ;

Akasaki, I .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :1115-1120

[2] The role of high-temperature island coalescence in the development of stresses in GaN films [J].

Böttcher, T ;

Einfeldt, S ;

Figge, S ;

Chierchia, R ;

Heinke, H ;

Hommel, D ;

Speck, JS .

APPLIED PHYSICS LETTERS, 2001, 78 (14) :1976-1978

[3]

Chierchia R, 2001, PHYS STATUS SOLIDI B, V228, P403, DOI 10.1002/1521-3951(200111)228:2<403::AID-PSSB403>3.0.CO

[4]

2-5

[5]

Dunn C., 1957, ACTA METALL, V1, P548

[6]

FEWSTER PF, 2000, XRAY SCATTERING SEMI

[7] In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers [J].

Figge, S ;

Böttcher, T ;

Einfeldt, S ;

Hommel, D .

JOURNAL OF CRYSTAL GROWTH, 2000, 221 :262-266

[8]

Heinke H, 1999, PHYS STATUS SOLIDI A, V176, P391, DOI 10.1002/(SICI)1521-396X(199911)176:1<391::AID-PSSA391>3.0.CO

[9]

2-I

[10]

Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495

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