Wetting-layer transformation for Pb nanocrystals grown on Si(111)

被引:29
作者
Feng, R
Conrad, EH [1 ]
Tringides, MC
Kim, C
Miceli, PF
机构
[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[2] Iowa State Univ, Dept Phys, US DOE, Ames Lab, Ames, IA 50011 USA
[3] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1812593
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present the results of in situ x-ray scattering experiments that investigate the growth of Pb nanocrystalline islands on Si(111). It is conclusively shown that the Pb nanocrystals do not reside on top of a Pb wetting layer. The nucleating Pb nanocrystals transform the highly disordered Pb wetting layer beneath the islands into well-ordered fcc Pb. The surface then consists of fcc Pb islands directly on top of the Si surface with the disordered wetting layer occupying the region between the islands. As the Pb nanocrystals coalesce at higher coverage we observe increasing disorder that is consistent with misfit strain relaxation. These results have important implications for predicting stable Pb island heights. (C) 2004 American Institute of Physics.
引用
收藏
页码:3866 / 3868
页数:3
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