Structural and electric properties of TiB2 thin films by RF sputtering

被引：25

作者：

Shutou, A ^{[1
]}

Matsui, T ^{[1
]}

Tsuda, H ^{[1
]}

Mabuchi, H ^{[1
]}

Morii, K ^{[1
]}

机构：

[1] Univ Osaka Prefecture, Coll Engn, Sakai, Osaka 5998531, Japan

来源：

MATERIALS LETTERS | 2000年 / 45卷 / 3-4期

基金：

日本学术振兴会;

关键词：

TiB2 thin film; electric properties; crystal structure; RF sputtering; carrier density;

D O I：

10.1016/S0167-577X(00)00094-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the structural and electric properties of TiB2 thin films produced by RF sputtering on glass substrates. The films are composed of the TiB2 small crystallites as well as the Brich amorphous phase, which is resulting from the Brich composition of the films. The resistivities of the films vary from 239 to 323 mu Omega cm depending on the RF power and the sputter time. These values are considerably larger than that of a bulk sample. The temperature dependence of the resisitivities is found to be carrier concentration dependent. However, the very high carrier densities (0.7-1.2 X 10(22)/cm(3)) and the relatively small mobilities (2.3-5.7 cm(2) V-1 s(-1)) were obtained, suggesting that the conduction carrier might behave like nearly free electrons. We discuss these features in conjunction with the microstructure of the films. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：143 / 148

页数：6

共 16 条

[1] REACTIVELY SPUTTERED TITANIUM BORIDE THIN-FILMS [J].

BLOM, HO ;

LARSSON, T ;

BERG, S ;

OSTLING, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02) :162-165

[2] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].

BURTON, WK ;

CABRERA, N ;

FRANK, FC .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358

[3] CRACK FORMATION AND SWELLING OF TIB2-NI CERAMICS IN LIQUID ALUMINUM [J].

FINCH, CB ;

TENNERY, VJ .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1982, 65 (07) :C100-C101

[4] A POSSIBLE NEW GROUP OF SEMICONDUCTING COMPOUNDS [J].

GEORGE, WPR ;

GOODMAN, CHL ;

STERLING, HF ;

WARREN, RW .

PHYSICA STATUS SOLIDI, 1967, 21 (01) :205-&

[5] HALL EFFECT AND ELECTRICAL CONDUCTIVITY OF TRANSITION-METAL DIBORIDES [J].

JURETSCHKE, HJ ;

STEINITZ, R .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 4 (1-2) :118-127

[6] Electrical resistivity of TiB2 at elevated pressures and temperatures [J].

Li, XY ;

Manghnani, MH ;

Ming, LC ;

Grady, DE .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (07) :3860-3862

[7]

MAZZA B, 1987, J ELECTROCHEM SOC, V137, P1187

[8] ELECTRICAL RESISTIVITIES OF MONOCRYSTALLINE AND POLYCRYSTALLINE TIB2 [J].

MCLEOD, AD ;

HAGGERTY, JS ;

SADOWAY, DR .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1984, 67 (11) :705-708

[9] DIFFUSION BARRIERS IN THIN-FILMS [J].

NICOLET, MA .

THIN SOLID FILMS, 1978, 52 (03) :415-443

[10] ELECTRICAL-RESISTIVITY OF TITANIUM DIBORIDE AND ZIRCONIUM DIBORIDE [J].

RAHMAN, M ;

WANG, CC ;

CHEN, WH ;

AKBAR, SA ;

MROZ, C .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1995, 78 (05) :1380-1382

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