AlN/GaN insulated gate heterostructure FET with regrown n+GaN ohmic contact

被引：55

作者：

Kawai, H ^{[1
]}

Hara, M ^{[1
]}

Nakamura, F ^{[1
]}

Imanaga, S ^{[1
]}

机构：

[1] Sony Corp, Res Ctr, Hodogaya Ku, Yokohama, Kanagawa 240, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 06期

关键词：

D O I：

10.1049/el:19980464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An AlN/GaN insulated gate heterostructure FET is presented. An n(+)GaN channel is placed on a thick Al0.15Ga0.85N layer and is covered by a 4 nm thick AlN insulator layer. The FET has a threshold voltage of near 0 V. A G(m) of 220 mS/mm for a 1.4 mu m gate length was obtained.

引用

页码：592 / 593

页数：2

共 7 条

[1] 0.12-mu m gate III-V nitride HFET's with high contact resistances [J].

Burm, J ;

Chu, K ;

Schaff, WJ ;

Eastman, LF ;

Khan, MA ;

Chen, QH ;

Yang, JW ;

Shur, MS .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (04) :141-143

[2]

KHAN MA, 1993, APPL PHYS LETT, V63, P1214, DOI 10.1063/1.109775

[3]

Khan MA, 1996, INST PHYS CONF SER, V142, P985

[4]

Khan MRH, 1997, SOLID STATE ELECTRON, V41, P287, DOI 10.1016/S0038-1101(96)00231-6

[5] Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation-doped field-effect transistors [J].

Mohammad, SN ;

Fan, ZF ;

Salvador, A ;

Aktas, O ;

Botchkarev, AE ;

Kim, W ;

Morkoc, H .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1420-1422

[6] LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].

MORKOC, H ;

STRITE, S ;

GAO, GB ;

LIN, ME ;

SVERDLOV, B ;

BURNS, M .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398

[7] Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors [J].

Wu, YF ;

Keller, BP ;

Keller, S ;

Kapolnek, D ;

Kozodoy, P ;

Denbaars, SP ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1438-1440

← 1 →