Optimization of ALD-(Zn,Mg)O buffer layers and (Zn,Mg)O/Cu(In,Ga)Se2 interfaces for thin film solar cells

被引:45
作者
Platzer-Bjorkman, C.
Torndahl, T.
Hultqvist, A.
Kessler, J.
Edoff, M.
机构
[1] Uppsala Univ, Angstrom Solar Ctr, SE-75121 Uppsala, Sweden
[2] Univ Nantes, FR-44322 Nantes 3, France
关键词
solar cells; Cu(In; Ga)Se-2; buffer layer; (Zn; Mg)O;
D O I
10.1016/j.tsf.2006.12.047
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
(Zn,Mg)O films, fabricated by atomic layer deposition, ALD, are investigated as buffer layers in Cu(In, Ga)Se-2-based thin film solar cells. Optimization of the buffer layer is performed in terms of thickness, deposition temperature and composition. High efficiency devices are obtained for deposition at 105-135 degrees C, whereas losses in open circuit voltage are observed at higher deposition temperatures. The optimal compositional region for (Zn,Mg)O buffer layers in this study is for Mg/(Zn+Mg) contents of about 0.1-0.2, giving band gap values of 3.5-3.7 eV These devices appear insensitive to thickness variations between 80 and 600 nm. Efficiencies of up to 16.2% are obtained for completely Cd- and S-free devices with (Zn,Mg)O buffer layers deposited with 1000 cycles at 120 degrees C and having a band gap of 3.6 eV. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:6024 / 6027
页数:4
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