A 4-Mb 0.18-μm 1T1MTJ toggle MRAM with balanced three input sensing scheme and locally mirrored unidirectional write drivers

被引：54

作者：

Andre, TW ^{[1
]}

Nahas, JJ

Subramanian, CK

Garni, BJ

Lin, HS

Omair, A

Martino, WL

机构：

[1] Freescale Semicond, Austin, TX 78729 USA

[2] Freescale Semicond, Chandler, AZ 85224 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2005年 / 40卷 / 01期

关键词：

MRAM; magnetic memories; magnetoresistance; memory architecture;

D O I：

10.1109/JSSC.2004.837962

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 4-Mb Toggle MRAM, built in 0.18-mum five level metal CMOS technology, uses a 1.55 mum(2) bit cell with a single toggling magneto tunnel junction to achieve a chip size of 4.5 mm x 6.3 mm. The memory uses unidirectional programming currents controlled by locally mirrored write drivers to apply a robust Toggle write sequence. An isolated read architecture driven by a balanced three input current mirror sense amplifier supports 25-ns cycle time asynchronous operation.

引用

页码：301 / 309

页数：9