InP and InAlP self-assembled quantum dots grown by metalorganic chemical vapor deposition

被引：4

作者：

Ryou, JH ^{[1
]}

Dupuis, RD ^{[1
]}

Reddy, CV ^{[1
]}

Narayanamurti, V ^{[1
]}

Mathes, DT ^{[1
]}

Hull, R ^{[1
]}

机构：

[1] Univ Texas, Ctr Microelect Res, Austin, TX 78712 USA

来源：

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ICIPRM.2000.850272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the characteristics of hip self-assembled quantum dots embedded in In0.5Al0.5P on GaAs substrates and InxAl1-xP self-assembled quantum dots on Cap substrates grown by metalorganic chemical vapor deposition. InP quantum dots show increased average dot sizes and decreased dot densities, as the growth temperature increases from 475C to 600C. At 650C, however, dramatically smaller and densely distributed quantum dots are formed. The InP quantum dots grown at 650C are dislocation-free "coherent" self-assembled quantum dots with an average size of similar to 20nm (height) and a density of similar to 1.5x 10(8)mm(-2). These InP quantum dots have broad range of luminescence corresponding to red or orange in the visible spectrum. InAlP quantum dots on GaP have smaller sizes and higher densities than InP dots on In0.5Al0.5P.

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收藏

页码：223 / 226

页数：4

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