Experimental proof-of-principle investigation of enhanced Z3DT in (001) oriented Si/Ge superlattices

被引：161

作者：

Koga, T

Cronin, SB

Dresselhaus, MS

Liu, JL

Wang, KL

机构：

[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA

[2] MIT, Dept Phys, Cambridge, MA 02139 USA

[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[4] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 10期

关键词：

D O I：

10.1063/1.1308271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An experimental proof-of-principle of an enhanced Z(3D)T (thermoelectric figure of merit) is demonstrated using (001) oriented Si/Ge superlattices. The highest value of the experimental Z(3D)T at 300 K for a (001) oriented Si(20 Angstrom)/Ge(20 Angstrom) superlattice is 0.1 using kappa = 5 Wm(-1) K-1, for the in-plane thermal conductivity, which is a factor of seven enhancement relative to the estimated value of Z(3D)T = 0.014 for bulk Si. The good agreement between experiment and theory validates our modeling approach (denoted as "carrier pocket engineering") to design superlattices with enhanced values of Z(3D)T. Proposals are made to enhance the experimental values of Z(3D)T for Si/Ge superlattices even further. (C) 2000 American Institute of Physics. [S0003-6951(00)05136-6].

引用

页码：1490 / 1492

页数：3

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