The light stability of microcrystalline silicon thin films deposited by VHF-PECVD method

被引：5

作者：

Chen, Yongsheng ^{[1
]}

Gu, Jinhua ^{[1
]}

Xu, Yanhua ^{[1
]}

Lu, Jingxiao ^{[1
]}

Yang, Shi-e ^{[1
]}

Gao, Xiaoyong ^{[1
]}

机构：

[1] Zhengzhou Univ, Dept Phys, Key Lab Mat Phys, Zhengzhou 450052, Peoples R China

来源：

SOLAR ENERGY | 2010年 / 84卷 / 08期

关键词：

Microcrystalline silicon; Thin film; Light induced degradation; SOLAR-CELLS; NANOCRYSTALLINE SILICON; FABRICATION; BEHAVIOR; MODULES;

D O I：

10.1016/j.solener.2010.03.027

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Microcrystalline silicon thin film is deposited under different conditions by plasma enhanced chemical vapor deposition. The light stability with different crystallinity and grain size is studied, and the growth mechanism is analyzed using the scaling behavior of roughening surface evolution. Degradation of photoconductivity mainly depends on crystallinity and grain size, but fundamentally, on the growth mechanism. Materials with high crystallinity and large grain size are more stable under light soaking. With the increasing of deposition pressure and input power, growth process transfers to zero diffusion limit growth mechanism, and films deposited present less grain size and poor light stability. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1337 / 1341

页数：5

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