Far-infrared cw difference-frequency generation a using vertically integrated and planar low temperature grown GaAs photomixers:: application to H2S rotational spectrum up to 3 THz

被引:31
作者
Mouret, G
Matton, S
Bocquet, R
Hindle, F
Peytavit, E
Lampin, JF
Lippens, D
机构
[1] Univ Littoral Cote Opale, Lab Phys Chim Atmosphere, CNRS, UMR 8101, F-59140 Dunkerque, France
[2] Univ Sci & Technol Lille, Inst Elect & Microelect Nanotechnol, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France
来源
APPLIED PHYSICS B-LASERS AND OPTICS | 2004年 / 79卷 / 06期
关键词
D O I
10.1007/s00340-004-1607-2
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The generation of continuous coherent THz radiation by mixing two cw Ti:Sa laser beams with a well-controlled frequency separation for a new scheme of vertically integrated low temperature grown GaAs (LTG-GaAs) spiral photomixer is reported. For this new photomixer device used in THz emission, the LTG-GaAs active layer is sandwiched between the two parallel metal plates of a high-speed photodetector loaded by a broadband spiral antenna. We have exploited the advantage of a higher delivered power in the low part of the spectrum (<2000 GHz), while a low RC time constant planar interdigitated detector was used at the upper frequency. The performances of the spectroscopic setup in terms of spectral resolution (5 MHz), tunability and frequency capability are assessed by measurements of the pure rotational spectra of hydrogen sulfide (H2S) up to 3000 GHz.
引用
收藏
页码:725 / 729
页数:5
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