Electronic properties of Gd@C82 metallofullerene peapods:: (Gd @ C82)n@SWNTs

被引:32
作者
Okazaki, T
Shimada, T
Suenaga, K
Ohno, Y
Mizutani, T
Lee, J
Kuk, Y
Shinohara, H [1 ]
机构
[1] Nagoya Univ, Dept Chem, Nagoya, Aichi 4648602, Japan
[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan
[3] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648603, Japan
[4] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea
[5] Seoul Natl Univ, Ctr Nanometer Scale Sci, Seoul 151747, South Korea
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2003年 / 76卷 / 04期
关键词
D O I
10.1007/s00339-002-2039-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electronic properties of Gd@C-82 metallofullerene peapods, (Gd@C-82), @SWNTs, were investigated by electron energy-loss spectroscopy (EELS), scanning tunneling microscopy and spectroscopy (STM/STS), and field-effect transistor (FET) transport measurements. The results indicate that the electronic structure of Gd@C-82 metallofullerene peapods is completely different from that of intact single-walled nanotubes (SWNTs). For example, Gd@C-82-peapod-FETs show ambipolar behavior which is not observed in the empty SWNT-FETs under our experimental conditions. Furthermore, in semiconducting nanotubes the band gap can be varied from similar to0.5 to similar to0.1 eV using inserted Gd@C-82 endohedral metallofullerenes with a spatial periodicity of 1.1 to 8.0 nm, depending on the density of the fullerenes. The present findings suggest that metallofullerene peapods may point the way toward novel electronic devices.
引用
收藏
页码:475 / 478
页数:4
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