High electric field effects on the thermal generation in hydrogenated amorphous silicon

被引：2

作者：

Ilie, A ^{[1
]}

Equer, B ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-185

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the electric field dependence of the electron-hale thermal generation process in hydrogenated amorphous silicon. A model was developed which takes into account the Poole-Frenkel effect and the thermally assisted tunneling. In order to explain the experimental results it was necessary to consider a strong electron-lattice interaction describing the carrier tunneling mechanism. Deep defects relaxation is also discussed.

引用

页码：185 / 190

页数：6