Single-crystal semiconducting chromium disilicide nanowires synthesized via chemical vapor transport

被引：60

作者：

Szczech, Jeannine R. ^{[1
]}

Schmitt, Andrew L. ^{[1
]}

Bierman, Matthew J. ^{[1
]}

Jin, Song ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Chem, Madison, WI 53706 USA

来源：

CHEMISTRY OF MATERIALS | 2007年 / 19卷 / 13期

关键词：

D O I：

10.1021/cm0707307

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Single-crystal CrSi2 nanowires were synthesized for the first time by a chemical vapor transport (CVT) method, using CrSi2 powder as the source material and iodine as the transport reagent. Structural characterization using electron microscopy, powder X-ray diffraction, and energy dispersive spectroscopy shows that these nanowires are hexagonal CrSi2 single-crystal structures along the < 001 > growth axis, with diameters ranging from 20 to 300 nm and length up to 100 mu m. Two-terminal electrical transport measurements show that these NWs have an estimated average resistivity of 4.4 x 10(-3) Omega cm and behave like a degenerate semiconductor. These novel semiconducting silicide nanowires will be useful for optoelectronic and thermoelectric applications. The reported CVT method can be general for the chemical synthesis of other metal silicides.

引用

页码：3238 / 3243

页数：6

共 41 条

[31] OXIDATION AND FORMATION MECHANISMS IN DISILICIDES - VSI2 AND CRSI2, INERT MARKER EXPERIMENTS AND INTERPRETATION [J].