Comment on "Self-diffusion in silicon: Similarity between the properties of native point defects"

被引:12
作者
Bracht, H [1 ]
Haller, EE
机构
[1] Univ Munster, Inst Mat Phys, D-48149 Munster, Germany
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
关键词
D O I
10.1103/PhysRevLett.85.4835
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
[No abstract available]
引用
收藏
页码:4835 / 4835
页数:1
相关论文
共 3 条
[1]   Silicon self-diffusion in isotope heterostructures [J].
Bracht, H ;
Haller, EE ;
Clark-Phelps, R .
PHYSICAL REVIEW LETTERS, 1998, 81 (02) :393-396
[2]   Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions [J].
Bracht, H ;
Stolwijk, NA ;
Mehrer, H .
PHYSICAL REVIEW B, 1995, 52 (23) :16542-16560
[3]   Self-diffusion in silicon: Similarity between the properties of native point defects [J].
Ural, A ;
Griffin, PB ;
Plummer, JD .
PHYSICAL REVIEW LETTERS, 1999, 83 (17) :3454-3457