ZnO:Eu thin-films:: Sol-gel derivation and strong photoluminescence from 5D0→7F0 transition of Eu3+ ions

被引：59

作者：

Chen, Peilang ^{[1
]}

Ma, Xiangyang ^{[1
]}

Yang, Deren ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2007年 / 431卷 / 1-2期

关键词：

europium; ZnO; sol-gel processes; photoluminescence;

D O I：

10.1016/j.jallcom.2006.05.078

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO:Eu films on silicon wafers were prepared by a simple sol-gel route. It was found that in order to achieve pure ZnO crystal phase, the annealing temperature could not be higher than 850 degrees C. The pronounced peaks in the photoluminescence (PL) spectra of the ZnO:Eu films were originated from D-5(0) -> F-7(0.1.2) transitions. It is somewhat unexpected that the PL emission from the D-5(0) -> F-7(0) transition, which is principally believed to be forbidden, was remarkable. In order to explain this phenomenon, it is proposed that a majority of incorporated Eu3+ ions in the films occupy the interstitial sites of ZnO host. (c) 2006 Published by Elsevier B.V.

引用

页码：317 / 320

页数：4

共 25 条

[1] White light emission of Eu3+-based hybrid xerogels [J].

Carlos, LD ;

Ferreira, RAS ;

Bermudez, VD ;

Molina, C ;

Bueno, LA ;

Ribeiro, SJL .

PHYSICAL REVIEW B, 1999, 60 (14) :10042-10053

[2]

Esparza-García AE, 2002, PHYS STATUS SOLIDI A, V193, P117, DOI 10.1002/1521-396X(200209)193:1<117::AID-PSSA117>3.0.CO

[3]

2-T

[4] Sol-gel formation of ordered nanostructured doped ZnO films [J].

Farley, NRS ;

Staddon, CR ;

Zhao, LX ;

Edmonds, KW ;

Gallagher, BL ;

Gregory, DH .

JOURNAL OF MATERIALS CHEMISTRY, 2004, 14 (07) :1087-1092

[5] Ga-doping effects on electrical and luminescent properties of ZnO:(La,Eu)OF red phosphor thin films [J].

Fujihara, S ;

Suzuki, A ;

Kimura, T .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (04) :2411-2416

[6] INFLUENCE OF BI AND MN ON THE GREEN LUMINESCENCE OF ZNO CERAMICS [J].

GARCIA, JA ;

REMON, A ;

PIQUERAS, J .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) :3058-3059

[7] Rare earth-doped confined structures for amplifiers and lasers [J].

Jacquier, B ;

Lebrasseur, E ;

Guy, S ;

Belarouci, A ;

Menchini, F .

JOURNAL OF ALLOYS AND COMPOUNDS, 2000, 303 :207-213

[8] Spectroscopy of pure and Eu3+ doped ZnO [J].

Jia, WY ;

Monge, K ;

Xu, WL ;

Katiyar, R .

INTEGRATED FERROELECTRICS, 2002, 42 :357-363

[9]

KEM W, 1970, RCA REV, V31, P187

[10] PHOTOLUMINESCENCE OF SEMICONDUCTING ZINC-OXIDE CONTAINING RARE-EARTH IONS AS IMPURITIES [J].

KOSSANYI, J ;

KOUYATE, D ;

POULIQUEN, J ;

RONFARDHARET, JC ;

VALAT, P ;

OELKRUG, D ;

MAMMEL, U ;

KELLY, GP ;

WILKINSON, F .

JOURNAL OF LUMINESCENCE, 1990, 46 (01) :17-24

← 1 2 3 →