Structural evolution of ZnO/sapphire(001) heteroepitaxy studied by real time synchrotron x-ray scattering

被引：52

作者：

Park, SI ^{[1
]}

Cho, TS ^{[1
]}

Doh, SJ ^{[1
]}

Lee, JL ^{[1
]}

Je, JH ^{[1
]}

机构：

[1] POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 03期

关键词：

D O I：

10.1063/1.126972

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural evolution during heteroepitaxial growth of ZnO/sapphire(001) by radio-frequency magnetron sputtering has been studied using real-time synchrotron x-ray scattering. The two-dimensional (2D) ZnO(002) layers grown in the initial stage are highly strained and well aligned to the substrate having a mosaic distribution of 0.01 degrees full width at half maximum (FWHM), in sharp contrast to the reported transition 2D layers grown by molecular-beam epitaxy. With increasing film thickness, the lattice strain is relieved and the poorly aligned (1.25 degrees FWHM) three-dimensional (3D) islands are nucleated on the 2D layers. We attribute the 2D-3D transition to the release of the strain energy stored in the film due to the film/substrate lattice mismatch. (C) 2000 American Institute of Physics. [S0003-6951(00)01529-1].

引用

页码：349 / 351

页数：3

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