Minimum temperature sensitivity of 1.55 μm vertical-cavity lasers at -30 nm gain offset

被引:66
作者
Piprek, J [1 ]
Akulova, YA [1 ]
Babic, DI [1 ]
Coldren, LA [1 ]
Bowers, JE [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
关键词
D O I
10.1063/1.121318
中图分类号
O59 [应用物理学];
学科分类号
摘要
Double-fused vertical-cavity surface-emitting lasers (VCSELs) have demonstrated the highest temperature performance of any 1.5 mu m VCSEL, but further optimization is needed to reduce their temperature sensitivity, We present and analyze threshold current measurements of these devices between -90 degrees C and 30 degrees C stage temperature, Despite a zero gain peak offset from the emission wavelength at room temperature, the pulsed threshold current has its minimum near -50 degrees C corresponding to about -30 nm gain offset, This is in contrast to a common VCSEL design rule. Temperature effects on the optical gain of the strain-compensated InGaAsP/InP active region are found to be the main cause for the disagreement. A design rule modification is proposed. Numerical simulation of an optimized 1.55 mu m VCSEL shows that gain offset improvements are counteracted by loss mechanisms, (C) 1998 American Institute of Physics.
引用
收藏
页码:1814 / 1816
页数:3
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