Fabrication technology of ferroelectric memories

Two types of ferroelectric memories have been proposed. One is a 1 transistor and 1 capacitor (1T1C) type and another is an FET (field effect transistor) type. The fabrication technique for fabrication ferroelectric capacitors on polycrystalline Si (poly-Si) was very effective for high density 1T1C ferroelectric memory and metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FET with stable properties. MFMIS FET is one type of FET ferroelectric memory which we proposed. To obtain good ferroelectric capacitors on poly-Si, we used Ir based materials as electrodes of the capacitors. By using Ir based electrodes, the characteristics of Pb(Zi,Ti)O-3 (PZT) capacitors on poly-Si were equivalent to those on SiO2. Moreover, the PZT capacitors with Ir based electrodes showed dramatic improvement in fatigue and imprint properties.