Oligothiophene-based nanostructures:: from solution to solid-state aggregates

被引:14
作者
Surin, M
Lazzaroni, R
Feast, WJ
Schenning, APHJ
Meijer, EW
Leclère, P
机构
[1] Univ Mons Hainaut Mat Nova, Serv Chim Mat Nouveaux, B-7000 Mons, Belgium
[2] Univ Durham, IRC Polymer Sci & Technol, Durham DH1 3LE, England
[3] Eindhoven Univ Technol, Lab Macromol & Organ Chem, NL-5600 MB Eindhoven, Netherlands
关键词
conjugated materials; self-assembly; scanning probe microscopy;
D O I
10.1016/j.synthmet.2004.05.022
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The possibility to develop optoelectronic devices with improved properties by controlling the degree of organization at the molecular level of organic materials has been driving the design of new pi-conjugated systems. In particular, the organization by self-assembling processes (pi-pi interactions, hydrogen bonding) of well-defined oligomeric systems such as disubstituted oligothiophene derivatives has been demonstrated as a promising approach to conjugated materials with a high degree of structural order of the constituent building blocks. Here, tapping-mode atomic force microscopy is used to investigate the morphologies of (i) thin deposits made from assembly of thiophene-based oligomers starting from molecularly dissolved solutions or (ii) aggregates already formed in solution. In order to understand the results in terms of supramolecular organization, comparisons with molecular modeling simulations are performed. During the self-assembly processes, the interplay between the conjugated molecules, the solvent, and the substrate surface is of primary importance. Depending on the interactions between the molecules and the substrate, one-dimensional (nanowires) or two-dimensional (platelets) objects can be generated. The self-organization of conjugated building blocks in solution or in solid-state on surfaces represents a starting point for the construction of molecular electronics or even circuits, through surface patterning with nanometer-sized objects. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:67 / 72
页数:6
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