ZnO film growth on (01(1)over-bar2)LiTaO3 by electron cyclotron resonance-assisted molecular beam epitaxy and determination of its polarity

被引：53

作者：

Nakamura, K ^{[1
]}

Shoji, T ^{[1
]}

Kang, HB ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Elect & Commun Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 6A期

关键词：

ZnO; LiTaO3; epitaxy; polarity; MBE; ECR; SAW; piezoelectrics;

D O I：

10.1143/JJAP.39.L534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-crystal ZnO films were grown on (01 (1) over bar 2)LiTaO3 substrates by electron cyclotron resonance-assisted molecular beam epitaxy (ECR-assisted MBE). The film orientation differed with the ratio of oxygen to zinc. Under oxygen-rich conditions, (11 (2) over bar 0)ZnO films with the c-axis parallel to the substrate surface were epitaxially grown. To identify the polarity of ZnO films with the c-axis parallel to the surface, a method using sideways chemical etching was proposed. The polarity of ZnO films was different when the films were grown on the + plane or the - plane of (01 (1) over bar 2)LiTaO3 substrates. The ZnO/LiTaO3 substrates offer a high electromechanical coupling factor of the shear horizontal-type leaky surface acoustic wave (SH-type leaky SAW) propagating along the X-axis due to an additional contribution of the piezoelectric shear effect of ZnO.

引用

页码：L534 / L536

页数：3

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