Diffusion of nickel and zinc in germanium

被引：11

作者：

Giese, A ^{[1
]}

Bracht, H ^{[1
]}

Stolwijk, NA ^{[1
]}

Mehrer, H ^{[1
]}

机构：

[1] UNIV MUNSTER,INST MET FORSCH,D-48149 MUNSTER,GERMANY

来源：

DEFECT AND DIFFUSION FORUM | 1997年 / 143卷

关键词：

germanium; nickel; zinc; diffusion; dissociative mechanism; vacancy mechanism; RTA; spreading resistance;

D O I：

10.4028/www.scientific.net/DDF.143-147.1059

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on diffusion of Zn and Ni in Ge which we investigated by means of the room-temperature spreading-resistance technique. Zn diffusion experiments were performed in the temperature range from 981 to 1175 K. The resulting Zn concentration-depth profiles were fitted by complementary error functions which yielded diffusion coefficients not much larger than those of Ge self-diffusion. Diffusion of Ni in Ge was investigated around 1073 K. A newly developed rapid thermal annealing (RTA) unit enabled us to use diffusion times as short as a few minutes. Ni concentration-depth profiles were reproduced by computer modeling based on the dissociative mechanism. The present results on Zn and Ni in Ge follow the general trend revealed by other solute elements of the fourth row of the periodic table.

引用

页码：1059 / 1064

页数：6

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