Damage calibration concept and novel B cluster reaction model for B transient enhanced diffusion over thermal process range from 600°C (839h) to 1100°C (5s) with various ion implantation doses and energies

被引：9

作者：

Suzuki, K ^{[1
]}

Miyashita, T ^{[1
]}

Tada, Y ^{[1
]}

Hoefler, A ^{[1
]}

Strecker, N ^{[1
]}

Fichtner, W ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, ULSI Technol Lab, Atsugi, Kanagawa 2431, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650433

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose to use a a fixed damage factor combined with an effective dose to generate an initial interstitial silicon concentration profile at a given B ion implantation conditions and demonstrate that this methodology can readily explain transient enhanced diffusion (TED) in almost all relevant cases of practical VLSI processing. We also developed a B cluster reaction model which enables us to tune time evolution of active B profiles in a flexible way.

引用

页码：501 / 504

页数：4