Application of analytical TEM for failure analysis of semiconductor device structures

TEM imaging combined with electron diffraction and analytical methods like EDS and EELS becomes increasingly important in cross-sectional on-product characterization and failure analysis in semiconductor industry, mainly driven by the ongoing scaling-down of device structures. A new analytical technique - energy filtering transmission electron microscopy (EFTEM) - is used more and more in physical failure analysis. Improved TEM sample preparation techniques like the FIB-cut technique allow the reliable target preparation of defects even in the case that a defect has already been prepared for SEM analysis. The application of analytical TEM for failure analysis is demonstrated for particle issues, open electrical contacts in tungsten LI and degradation of AlCu1 interconnects. (C) 2000 Elsevier Science Ltd. All rights reserved.