Dominant iron gettering mechanism in p/p+ silicon wafers

被引：12

作者：

Lin, W ^{[1
]}

Benton, JL

Pinacho, R

Ramappa, DA

Henley, W

机构：

[1] Lucent Technol, Microelect, Allentown, PA 18109 USA

[2] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[3] Univ S Florida, Tampa, FL 33620 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 02期

关键词：

D O I：

10.1063/1.126937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fe gettering mechanisms in p/p(+) epitaxial Si were investigated under controlled contamination and annealing cycles. The dominant Fe gettering mechanism is the Fermi level controlled coulomb attraction between Fe+ and B- in the p(+) substrate of the p/p(+) wafers. Oxygen precipitates do not appear to contribute when using normal cooling rates following heat treatments. The epi-substrate interfacial strain plays no role in Fe gettering. (C) 2000 American Institute of Physics. [S0003-6951(00)05128-7].

引用

页码：241 / 243

页数：3

共 8 条

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