Oligoethyleneoxide functionalised sexithiophene organic field effect transistors

被引：21

作者：

Sandberg, H ^{[1
]}

Henze, O

Kilbinger, AFM

Sirringhaus, H

Feast, WJ

Friend, RH

机构：

[1] Abo Akad Univ, Dept Phys, Grad Sch Mat Res, FIN-20500 Turku, Finland

[2] Univ Cambridge, Cavevdish Lab, Cambridge CB3 0HE, England

[3] Univ Durham, IRC Polymer Sci & Technol, Durham DH1 3LE, England

来源：

SYNTHETIC METALS | 2003年 / 137卷 / 1-3期

关键词：

amorphous thin films; semiconducting films; oligoethyleneoxide functionalised sexithiophenes; organic semiconductors; thin film; transistor;

D O I：

10.1016/S0379-6779(02)01125-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of oligoethyleneoxide functionalised sexithiophene have been prepared utilising the self organising properties of the material. The polarity difference of the constituents induces preferential order in thin films of the material which enhances transistor operation. Devices are fabricated with the material as the organic semiconductor and the thin film transistor (TFT) characteristics can be related to the structure and organisation of the thin film.

引用

页码：885 / 886

页数：2

共 6 条

[1]

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