Morphology and optical properties of amorphous ZnS films deposited by ultrasonic-assisted successive ionic layer adsorption and reaction method

被引：67

作者：

Gao, XD ^{[1
]}

Li, XM ^{[1
]}

Yu, WD ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

THIN SOLID FILMS | 2004年 / 468卷 / 1-2期

关键词：

successive ionic layer adsorption and reaction (SILAR); zinc sulfide; morphology; optical properties;

D O I：

10.1016/j.tsf.2004.04.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ultrasonic-assisted successive ionic layer adsorption and reaction method was developed, and the growth rate of film was improved greatly Amorphous ZnS films were successfully deposited on glass and Si(111) wafer using ethylenediamine-complexed zinc source. The morphologies and optical properties of as-deposited films were investigated. Results show that a high growth rate of 3-4.3 nm per cycle can be achieved for the deposition of ZnS film through the combined application of ethylenediamine-complexed zinc precursor and ultrasonic rinsing. Obtained ZnS films exhibit a highly smooth morphology with the grain size of 10-30 nm, layered structure, high transmittance of 90% in visible band, and optical band gap of 3.67 eV (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：43 / 47

页数：5

共 25 条

[1] Electrical studies of semiconductor-nanocrystal colloids [J].

Alivisatos, AP .

MRS BULLETIN, 1998, 23 (02) :18-23

[2] Chemical bath deposition of ZnS thin films and modification by air annealing [J].

Arenas, OL ;

Nair, MTS ;

Nair, PK .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (10) :1323-1330

[3] ZNXCD1-XS FILMS FOR USE IN HETEROJUNCTION SOLAR-CELLS [J].

BURTON, LC ;

HENCH, TL .

APPLIED PHYSICS LETTERS, 1976, 29 (09) :612-614

[4] Dependence of electro-optical properties on the deposition conditions of chemical bath deposited CdS thin films [J].

Dona, JM ;

Herrera, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (11) :4091-4098

[5] THE COLLOID-CHEMICAL APPROACH TO NANOSTRUCTURED MATERIALS [J].

FENDLER, JH ;

MELDRUM, FC .

ADVANCED MATERIALS, 1995, 7 (07) :607-632

[6] Chemical bath deposition of zinc sulfide based buffer layers using low toxicity materials [J].

Johnston, DA ;

Carletto, MH ;

Reddy, KTR ;

Forbes, I ;

Miles, RW .

THIN SOLID FILMS, 2002, 403 :102-106

[7] Growth of strongly orientated lead sulfide thin films by successive ionic layer adsorption and reaction (SILAR) technique [J].

Kanniainen, T ;

Lindroos, S ;

Ihanus, J ;

Leskela, M .

JOURNAL OF MATERIALS CHEMISTRY, 1996, 6 (02) :161-164

[8] Production and evaluation of ZnS thin films by the MOCVD technique as alpha-particle detectors [J].

Kashani, H .

THIN SOLID FILMS, 1996, 288 (1-2) :50-56

[9] Stress and surface studies of SILAR grown ZnS thin films on (100)GaAs substrates [J].

Laukaitis, G ;

Lindroos, S ;

Tamulevicius, S ;

Laskelä, M ;

Rackaitis, M .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2000, 288 (02) :223-230

[10] SILAR deposition of CdxZn1-xS thin films [J].

Laukaitis, G ;

Lindroos, S ;

Tamulevicius, S ;

Leskelä, M ;

Rackaitis, M .

APPLIED SURFACE SCIENCE, 2000, 161 (3-4) :396-405

← 1 2 3 →