Adsorption state of 1,4-cyclohexadiene on Si(100)(2X1)

被引：36

作者：

Hamaguchi, K ^{[1
]}

Machida, S ^{[1
]}

Mukai, K ^{[1
]}

Yamashita, Y ^{[1
]}

Yoshinobu, J ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Minato Ku, Tokyo 1068666, Japan

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.62.7576

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The adsorption state of 1,4-cyclohexadiene on a Si(100)(2x1) surface is studied using low-energy electron diffraction (LEED) and photoelectron spectroscopy (PES). LEED shows a sharp 2x1 pattern at saturation after the adsorption of 1,4-cyclohexadiene indicating that the Si dimer structure is maintained. Judging from the PES results, almost all the dangling bonds react on adsorption of 1,4-cyclohexadiene, and one of the two pi bonds in 1,4-cyclohexadiene reacts with the Si dimer. Thus, the molecule adsorbs on a Si(100)(2x1) dimer one to one with di-sigma bonding, and the ideal saturation coverage is expected to be 0.5 monolayer. It is concluded that the molecules are anisotropically aligned and the molecular plane is inclined from the surface normal. with the remaining ii bond located at the vacuum side.

引用

页码：7576 / 7580

页数：5

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