Superconductor-insulator transition driven by magnetic-field and disorder in two-dimensional MoxSi1-x films

被引：49

作者：

Okuma, S ^{[1
]}

Terashima, T ^{[1
]}

Kokubo, N ^{[1
]}

机构：

[1] Tokyo Inst Technol, Res Ctr Very Low Temp Syst, Meguro Ku, Tokyo 152, Japan

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 106卷 / 08期

关键词：

disordered systems; superconductors; thin films; electronic states (localized); electronic transport;

D O I：

10.1016/S0038-1098(98)00066-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have made systematic measurements for the field-swept superconductor-insulator (S-I) transition over a wide range of disorder through the disorder-driven S-I transition using very thin amorphous MoxSi1-x films with a fixed thickness of 4 nm. Critical resistances determined from both the field-driven and disorder-driven S-I transitions are found to be nonuniversal and apparently smaller than R-Q similar to 6.5 k Omega. (C) 1998 Elsevier Science Ltd. All rights reserved.

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页码：529 / 533

页数：5

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