Plasma charging damage of ultra-thin gate-oxide - The measurement dilemma

被引：19

作者：

Cheung, KP ^{[1
]}

Mason, P ^{[1
]}

Hwang, D ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

2000 5TH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE | 2000年

关键词：

D O I：

10.1109/PPID.2000.870566

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We examined the problem of detecting plasma charging damage in deep submicron technology where the gate-oxide is ultra-thin. From the viewpoint of damage impacting gate-oxide reliability, we show that the current available method is incapable to provide sufficient sensitivity.

引用

页码：10 / 13

页数：4