Characterization and application of rapid thermal oxide surface passivation for the highest efficiency RTP silicon solar cells

被引：1

作者：

Doshi, P ^{[1
]}

Moschner, J ^{[1
]}

Jeong, J ^{[1
]}

Rohatgi, A ^{[1
]}

Singh, R ^{[1
]}

Narayanan, S ^{[1
]}

机构：

[1] Univ Georgia, Georgia Inst Technol, Ctr Excellence Photovolta Res & Educ, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.653931

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper presents the development and analysis of the first 19%-efficient silicon solar cells fabricated by rapid thermal processing (RTP). These cells required no high-temperature conventional furnace processing (CFP). Improved front surface passivation by rapid thermal oxidation (RTO) was found to reduce S-front from 7.5x10(5) to 2x10(4)cm/s, decrease J(0e) by almost an order of magnitude, and increase cell efficiency by about 1% (absolute). An additional 1% gain in efficiency was achieved by applying a thicker screen-printed, RTP-alloyed Al-BSF instead of the standard 1 mu m evaporated Al-BSF. Because of the rapid heating rate in RTP, the RTP Al-BSF also gives a more uniform and effective BSF compared with the CFP Al-BSF. In comparison with furnace processed cells, this RTP/RTO process reduced the time for diffusion and oxidation from 330 to 10 min without sacrificing efficiency. To reduce back surface recombination further, RTO can be grown on the back. PCD characterization of RTO on 1.3 Omega cm Si reveals an S-back well below 100 cm/s, which can result in >20% efficient RTP/RTO cells.

引用

页码：87 / 90

页数：4