256x256 InSb focal plane arrays

被引：6

作者：

Gau, YT ^{[1
]}

Dai, LK ^{[1
]}

Yang, SP ^{[1
]}

Weng, PK ^{[1
]}

Huang, KS ^{[1
]}

Liu, YN ^{[1
]}

Chiang, CD ^{[1
]}

Jih, FW ^{[1
]}

Cherng, YT ^{[1
]}

Chang, H ^{[1
]}

机构：

[1] Chung Shan Inst Sci & Technol, Mat & Electroopt Div, Tao Yuan 325, Taiwan

来源：

OPTOELECTRONIC MATERIALS AND DEVICES II | 2000年 / 4078卷

关键词：

InSb; focal plane array; readout integrated circuit (ROIC); indium bump; hybridization;

D O I：

10.1117/12.392175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 256x256 backside illluminated photovoltaic indium antimonide (InSb) focal plane arrays having spectral response in the medium wavelength infrared (3 to 5 mu m) was designed and developed at Chung Shang Institute of Science and Technology for use in a variety of military and commercial applications. Operating at 77 degrees K, the arrays had a mean laboratory detectivity of 3.12x10(11) cmHz (1/2)/W with f/3 optics. The responsivity non-uniformity was 3%, and the operable yield exceeded 99%. The EPA achieves an Noise Equivalent Temperature Difference (NETD) is less than 0.025 degrees K at 300 degrees K background with f/3 optics.

引用

页码：467 / 479

页数：13

共 5 条

[1] BULK LIFETIME DETERMINATION OF ETCH-THINNED INSB WAFERS FOR 2-DIMENSIONAL INFRARED FOCAL PLANE ARRAY [J].

BLOOM, I ;

NEMIROVSKY, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (04) :809-812

[2] QUANTUM EFFICIENCY AND CROSSTALK OF AN IMPROVED BACKSIDE-ILLUMINATED INDIUM-ANTIMONIDE FOCAL-PLANE ARRAY [J].

BLOOM, I ;

NEMIROVSKY, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (08) :1792-1796

[3]

HOFFMAN A, 1991, SPIE, V1540, P297

[4]

NIBLACK CA, 1989, SPIE, V1157, P124

[5]

PARRISH WJ, 1991, SPIE, V1540, P274

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