Self-assembled germanium nano-clusters on silver(110)

被引:17
作者
Léandri, C
Oughaddou, H
Gay, JM
Aufray, B
Le Lay, G
Bibérian, JP
Ranguis, A
Bunk, O
Johnson, RL
机构
[1] CNRS, CRMCN, Dept Phys, F-13288 Marseille 09, France
[2] Univ Hamburg, Inst Expt Phys 2, D-22761 Hamburg, Germany
关键词
self-assembly; clusters; surface structure; morphology; roughness; and topography; germanium; silver; scanning tunneling microscopy; X-ray scattering; diffraction; and reflection;
D O I
10.1016/j.susc.2004.10.005
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The adsorption of germanium on Ag(110) has been investigated by scanning tunnelling microscopy (STM), as well as surface X-ray diffraction (SXRD). At 0.5 germanium monolayer (ML) coverage, Low Energy Electron Diffraction (LEED) patterns reveals a sharp c(4 x 2) superstructure. Based on STM images and SXRD measurements, we present an atomic model of the surface structure with Ge atoms forming tetramer nano-clusters perfectly assembled in a two-dimensional array over the silver top layer. The adsorption of the germanium atoms induces a weak perturbation of the Ag surface. Upon comparison with results obtained on the (111) and (100) faces, we stress the role played by the relative interactions between silver and germanium on the observed surface structures. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:L369 / L374
页数:6
相关论文
共 11 条
[1]   Solution of Ge(111)-(4x4)-Ag structure using direct methods applied to X-ray diffraction data [J].
Collazo-Davila, C ;
Grozea, D ;
Marks, LD ;
Feidenhans'l, R ;
Nielsen, M ;
Seehofer, L ;
Lottermoser, L ;
Falkenberg, G ;
Johnson, RL ;
Göthelid, M ;
Karlsson, U .
SURFACE SCIENCE, 1998, 418 (02) :395-406
[2]   GROWTH OF SILICON AND GERMANIUM ON CU(111) STUDIED BY ANGLE-RESOLVED DIRECT AND INVERSE PHOTOEMISSION [J].
DUDDE, R ;
BERNHOFF, H ;
REIHL, B .
PHYSICAL REVIEW B, 1990, 41 (17) :12029-12034
[3]  
GROZEA D, 1998, SURF SCI, V32, P418
[4]   INITIAL GROWTH OF SILVER ON GE(111) STUDIED BY SCANNING-TUNNELING-MICROSCOPY [J].
HAMMAR, M ;
GOTHELID, M ;
KARLSSON, UO ;
FLODSTROM, SA .
PHYSICAL REVIEW B, 1993, 47 (23) :15669-15674
[5]   Surface atomic structure of c(2x2)-Si on Cu(110) [J].
MartinGago, JA ;
Fasel, R ;
Hayoz, J ;
Agostino, RG ;
Naumovic, D ;
Aebi, P ;
Schlapbach, L .
PHYSICAL REVIEW B, 1997, 55 (19) :12896-12898
[6]   Ge tetramer structure of the p(2√2x4√2)R45° surface reconstruction of Ge/Ag(001):: A surface x-ray diffraction and STM study [J].
Oughaddou, H ;
Gay, JM ;
Aufray, B ;
Lapena, L ;
Le Lay, G ;
Bunk, O ;
Falkenberg, G ;
Zeysing, JH ;
Johnson, RL .
PHYSICAL REVIEW B, 2000, 61 (08) :5692-5697
[7]   Ge/Ag(111) semiconductor-on-metal growth:: Formation of an Ag2Ge surface alloy [J].
Oughaddou, H ;
Sawaya, S ;
Goniakowski, J ;
Aufray, B ;
Le Lay, G ;
Gay, JM ;
Tréglia, G ;
Bibérian, JP ;
Barrett, N ;
Guillot, C ;
Mayne, A ;
Dujardin, G .
PHYSICAL REVIEW B, 2000, 62 (24) :16653-16656
[8]   STM studies of the growth of the Si/Cu(110) surface alloy [J].
Polop, C ;
Sacedon, JL ;
Martin-Gago, JA .
SURFACE SCIENCE, 1998, 402 (1-3) :245-248
[9]   Ge deposition on Ag surfaces:: Dependence of the adsorption characteristics on the surface orientation [J].
Sawaya, S ;
Goniakowski, J ;
Tréglia, G .
PHYSICAL REVIEW B, 2000, 61 (12) :8469-8474
[10]   THE STRUCTURE OF SI(111)-(SQUARE-ROOT-3X SQUARE-ROOT-3)R30-DEGREES-AG DETERMINED BY SURFACE X-RAY-DIFFRACTION [J].
VLIEG, E ;
VANDERGON, AWD ;
VANDERVEEN, JF ;
MACDONALD, JE ;
NORRIS, C .
SURFACE SCIENCE, 1989, 209 (1-2) :100-114