Properties of reactively sputtered ZnTe:N and its use in recombination junctions

被引：4

作者：

Drayton, J ^{[1
]}

Taylor, C ^{[1
]}

Gupta, A ^{[1
]}

Bohn, RG ^{[1
]}

Rich, G ^{[1
]}

Compaan, AD ^{[1
]}

McCandless, BE ^{[1
]}

Rose, D ^{[1
]}

机构：

[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190621

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Reactively sputtered ZnTe:N is a close valence-band match to CdTe, transparent below 2.2 eV and therefore an attractive candidate for a back contact/tunnel junction in tandem cells using CdTe or CdZnTe top cells. We report on measurements of the optical emission spectra of N-2 during reactive sputtering as part of the doping optimization. For materials characterization, a series of films produced with various N-2/Ar gas ratios were studied by x-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectroscopy, optical absorption, variable angle spectroscopic ellipsometry (VASE), and the Hall effect., For transparent back contact fabrication, we used a ZnTe:N/ZnO:Al recombination junction bilayer.

引用

页码：539 / 542

页数：4

共 7 条

[1]

DRAYTON J, 2001, MAT RES SOC S P, V668

[2] III-N semiconductor growth with activated nitrogen:: State-specific study of A3Σu+ metastable N2 molecules [J].