Analysis of threshold voltage shift caused by bias stress in low temperature poly-Si TFTs

被引：37

作者：

Inoue, S ^{[1
]}

Ohshima, H ^{[1
]}

Shimoda, T ^{[1
]}

机构：

[1] Seiko Epson Corp, Base Technol Res Ctr, Nagano 392, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The degradation phenomenon of low temperature (less than or equal to 425 degrees C) polycrystalline-silicon thin film transistors (poly-Si TFTs) caused by self-heating has been investigated. In n-channel TFTs, the subthreshold characteristics are significantly and rapidly shifted in the positive direction. This is particularly marked in wide channel TFTs and/or small size TFTs. in order to improve reliability, TFTs with divided channel patterns have also been introduced.

引用

页码：527 / 530

页数：4