Correlation between the domain structure and ferroelectricity in PbTiO3 thin films

被引:6
作者
Byun, C [1 ]
Jang, JW
Lee, BW
机构
[1] Korea Adv Inst Sci & Technol, Dept Nucl Engn, Taejon 305701, South Korea
[2] Korea Inst Ind Technol, Automat & Machining Syst Res Ctr, Gumchon Gu, Seoul 153020, South Korea
[3] Seoul Natl Univ, Dept Inorgan Mat Engn, Seoul 151742, South Korea
关键词
PbTiO3; post-annealing; Curie temperature; perovskite; ferroelectricity; domain;
D O I
10.1016/S0167-577X(97)00188-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two types of PbTiO3 thin films were prepared on Pt/SiO2/Si substrates by metal-organic chemical vapor deposition (MOCVD). One type was in situ deposited at 450 degrees C, while the other type was post-annealed at 650 degrees C which is above the Curie temperature (-490 degrees C) after deposition at 450 degrees C. Both types of films possessed the perovskite structure, but only the film post-annealed at 650 degrees C displayed ferroelectricity evidenced by the capacitance-voltage (C-V) characteristics, the displacement-electric field (D-E) hysteresis, and the domain wall structure. (C) 1998 Elsevier Science B.V.
引用
收藏
页码:308 / 311
页数:4
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