Amorphous silicon photodiode thin film transistor image sensor with diode on top structure

被引：13

作者：

Powell, MJ ^{[1
]}

Glasse, C ^{[1
]}

French, ID ^{[1
]}

Franklin, AR ^{[1
]}

Hughes, JR ^{[1
]}

Curran, JE ^{[1
]}

机构：

[1] Philips Res Labs, Redhill RH1 5HA, Surrey, England

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-863

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a new amorphous silicon image sensor technology using a matrix array of amorphous silicon thin film transistors and photodiodes, where the amorphous silicon nip photodiode is fabricated on top of a thick insulating layer, on top of the thin jam transistor array. We call this 'diode on top' technology or DOTTY. The active diode area can be as high as 93%, compared to 50% for our conventional photodiode-FT technology. This leads to a higher signal to noise performance, which is important for medical X-ray applications.

引用

页码：863 / 868

页数：6