18.5% copper indium gallium diselenide (CIGS) device using single-layer, chemical-bath-deposited ZnS(O,OH)

被引：84

作者：

Bhattacharya, RN ^{[1
]}

Contreras, MA ^{[1
]}

Teeter, G ^{[1
]}

机构：

[1] NREL, Golden, CO 80401 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 11B期

关键词：

copper indium gallium diselenide (CIGS); chemical bath deposition (CBD); ZnS(O; OH);

D O I：

10.1143/JJAP.43.L1475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The recent development of a chemical-bath-deposited (CBD) ZnS(O,OH) layer that enabled an 18.5%-efficient copper indium gallium diselenide (CIGS) devices using a single-layer of CBD ZnS(O,OH) is reported in this paper. Such buffer layers could potentially replace US in the CIGS solar cell.

引用

页码：L1475 / L1476

页数：2