Time-resolved photoluminescence study of excitons in hexagonal GaN layers grown on sapphire

被引：21

作者：

Pau, S

Liu, ZX

Kuhl, J

Ringling, J

Grahn, HT

Khan, MA

Sun, CJ

Ambacher, O

Stutzmann, M

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[3] APA Opt Inc, Blaine, MN 55449 USA

[4] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.57.7066

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We performed time-resolved and continuous wave photoluminescence on two samples of hexagonal GaN, one with free exciton emission and the other without. For the sample with free exciton emission, very different decay dynamics are observed between the front and backside emission. We find that the strain caused by the lattice mismatch between the sapphire substrate and the GaN film has a large influence on the population decay of the sample with free exciton emission and a minor influence on the decay properties of the sample dominated by bound exciton emission. A polariton picture is used to describe the observed behavior.

引用

页码：7066 / 7070

页数：5

共 26 条

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