Physical oxide thickness extraction and verification using quantum mechanical simulation

被引：43

作者：

Bowen, C ^{[1
]}

Fernando, CL ^{[1
]}

Klimeck, G ^{[1
]}

Chatterjee, A ^{[1
]}

Blanks, D ^{[1
]}

Lake, R ^{[1
]}

Hu, J ^{[1
]}

Davis, J ^{[1
]}

Kulkarni, M ^{[1
]}

Hattangady, S ^{[1
]}

Chen, IC ^{[1
]}

机构：

[1] Texas Instruments Inc, Corp R&D, Dallas, TX 75235 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650518

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Physical gate oxide thickness is extracted from TiN gate PMOS and NMOS capacitance voltage measurements using an efficient multi-band Hartree self-consistent Poisson solver. The extracted oxide thicknesses are then used to perform direct tunneling current simulations. Excellent agreement be tween measured a simulated tunnel current is obtained without the use of adjustable fitting parameters.

引用

页码：869 / 872

页数：4