共 23 条
Fac-Alq3 and Mer-Alq3 Nano/Microcrystals with Different Emission and Charge-Transporting Properties
被引:70
作者:

Bi, Hai
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机构:
Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China

Zhang, Hongyu
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机构:
Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China

Zhang, Yu
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机构:
Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China

Gao, Hongze
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机构:
Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China

Su, Zhongmin
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机构:
Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China

Wang, Yue
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机构:
Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China
机构:
[1] Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China
基金:
中国国家自然科学基金;
关键词:
ALQ(3) NANORODS;
FIELD-EMISSION;
THIN-FILMS;
ALUMINUM;
NANOWIRES;
PHASE;
ELECTROLUMINESCENCE;
NANOPARTICLES;
DEVICES;
DIODES;
D O I:
10.1002/adma.200903094
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
A facile double-film annealing approach has been developed to prepare fac-Alq(3) nano/microstructures (see figure) as well as a uniform thin film. More noteworthy is that this approach not only enables the synthesis of high-quality fac-Alq(3) nano-structures and thin films but also provides the possibility to evaluate the transporting nature of the fac-Alq(3) film. Current voltage characterization of the fac-Alq(3) film implies that fac-Alq(3) is a typical p-type semiconductor.
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页码:1631 / +
页数:5
相关论文
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