Aluminum impurities in silicon: Investigation of x-ray Raman scattering in total reflection x-ray fluorescence spectroscopy

被引:26
作者
Baur, K [1 ]
Kerner, J
Brennan, S
Singh, A
Pianetta, P
机构
[1] Stanford Univ, Stanford Synchrotron Radiat Lab, Stanford, CA 94309 USA
[2] ARACOR, Sunnyvale, CA 94086 USA
关键词
D O I
10.1063/1.1312848
中图分类号
O59 [应用物理学];
学科分类号
摘要
Total reflection x-ray fluorescence using synchrotron radiation from the Stanford Synchrotron Radiation Laboratory has been used to study Al impurities on Si wafer surfaces. For primary excitation energies below the Si K absorption edge an inelastic resonance scattering due to resonant x-ray Raman scattering is observed. This scattering dominates the background behavior of the Al K fluorescence line, and consequently limits the achievable sensitivity for detection of Al surface contaminants. The energy and angle dependence of the resonant x-ray Raman scattering has been investigated to determine the experimental conditions for which the highest sensitivity for Al can be achieved. We find that for a precise determination of the achievable sensitivity, the specific shape of the continuous Raman background has to be taken into account. Our calculations demonstrate a minimum detection limit for Al of 6x10(9) atoms/cm(2) for a 10 000 s count time. (C) 2000 American Institute of Physics. [S0021-8979(00)04721-6].
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页码:4642 / 4647
页数:6
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