Electron-phonon coupling in a boron-doped diamond superconductor

被引:126
作者
Xiang, HJ
Li, ZY
Yang, JL [1 ]
Hou, JG
Zhu, QS
机构
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Lab Bond Select Chem, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1103/PhysRevB.70.212504
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structure, lattice dynamics, and electron-phonon coupling of the boron-doped diamond are investigated using the density-functional supercell method. Our results indicate the boron-doped diamond is a phonon mediated superconductor, confirming previous theoretical conclusions deduced from the calculations employing the virtual-crystal approximation. We show that the optical-phonon modes involving B vibrations play an important role in the electron-phonon coupling. Different from previous theoretical results, our calculated electron-phonon coupling constant is 0.39 and the estimated superconducting transition temperature T-c is 4.4 K for the boron-doped diamond with 2.78% boron content using the Coulomb pseudopotential mu*=0.10, in excellent agreement with the experimental result.
引用
收藏
页码:1 / 4
页数:4
相关论文
共 31 条
[2]   THE RESONATING VALENCE BOND STATE IN LA2CUO4 AND SUPERCONDUCTIVITY [J].
ANDERSON, PW .
SCIENCE, 1987, 235 (4793) :1196-1198
[3]   LOCALIZED MAGNETIC STATES IN METALS [J].
ANDERSON, PW .
PHYSICAL REVIEW, 1961, 124 (01) :41-&
[4]   Ab initio modelling of band states in doped diamond [J].
Barnard, AS ;
Russo, SP ;
Snook, IK .
PHILOSOPHICAL MAGAZINE, 2003, 83 (09) :1163-1174
[5]   Phonons and related crystal properties from density-functional perturbation theory [J].
Baroni, S ;
de Gironcoli, S ;
Dal Corso, A ;
Giannozzi, P .
REVIEWS OF MODERN PHYSICS, 2001, 73 (02) :515-562
[6]  
BASKARAN G, CONDMAT0404286
[7]   Band gaps of GaPN and GaAsN alloys [J].
Bellaiche, L ;
Wei, SH ;
Zunger, A .
APPLIED PHYSICS LETTERS, 1997, 70 (26) :3558-3560
[8]  
BOERI L, CONDMAT0404447
[9]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[10]   Unexpected band-gap collapse in quaternary alloys at the group-III-nitride/GaAs interface: GaAlAsN [J].
Chen, CF ;
Wang, EG ;
Gu, YM ;
Bylander, DM ;
Kleinman, L .
PHYSICAL REVIEW B, 1998, 57 (07) :3753-3756