Epitaxial carbon nanotube film self-organized by sublimation decomposition of silicon carbide

被引:151
作者
Kusunoki, M
Rokkaku, M
Suzuki, T
机构
[1] Japan Fine Ceramics Center, Atsuta-ku, Nagoya, 456
[2] Meijo University, Tenpaku-ku
关键词
D O I
10.1063/1.120158
中图分类号
O59 [应用物理学];
学科分类号
摘要
A film of well-oriented carbon nanotubes was produced by sublimation decomposition of silicon carbide at 1700 degrees C by using YAG laser heating in a transmission electron microscope (TEM). The processes of SiC decomposition and the formation of carbon nanotubes were observed successively by high-resolution electron microscopy (HREM). Carbon nanotubes were mostly oriented along the [111] direction on the (111) surface plane of beta-SiC single crystal. The interface between them was observed by HREM. (C) 1997 American Institute of Physics.
引用
收藏
页码:2620 / 2622
页数:3
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