Impacts of strained SiO2 on TDDB lifetime projection

被引：12

作者：

Harada, Y ^{[1
]}

Eriguchi, K ^{[1
]}

Niwa, M ^{[1
]}

Watanabe, T ^{[1
]}

Ohdomari, I ^{[1
]}

机构：

[1] Matsushita Elect Corp, Semicond Co, ULSI, Proc Technol Dev Ctr,Minami Ku, Kyoto 6018413, Japan

来源：

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2000年

关键词：

D O I：

10.1109/VLSIT.2000.852831

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We clarify the effects of the strained-SiO2 on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (beta) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO2 changes the statistical distribution of the Si-O-Si angle, leading to a decrease of T-bd and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (similar to 115 degrees) for the 2nm-thick SiO2/Si system.

引用

页码：216 / 217

页数：2

共 5 条

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