Performance and reliability evaluations of P-channel flash memories with different programming schemes

被引：13

作者：

Chung, SS ^{[1
]}

Kuo, SN ^{[1
]}

Yih, CM ^{[1
]}

Chao, TS ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Taipei, Taiwan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650385

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a complete study of the cell reliability based an a unique oxide damage characterization for two different programming schemes of p-channel flash cell will be presented These two programming schemes are Channel Hot Electron (CHE) injection or Band-to-Band (BTB) tunneling induced hot electron injection. Degradation of memory cells after P/E cycles due to the above oxide damages has been identified. It was found that both N-it and Q(ox) will dominate the device degradation during programming. Although p-flash cell has high speed performance by comparing with n-flash cell, extra efforts are needed for designing reliable p-channel flash cell by appropriate drain engineering or related device optimization.

引用

页码：295 / 298

页数：4