Magnetic-field-induced insulator quantum Hall conductor-insulator transitions in doped GaAs/AlxGa1-xAs quantum wells

被引：19

作者：

Lee, CH ^{[1
]}

Chang, YH

Suen, YW

Lin, HH

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[2] Natl Chung Hsing Univ, Dept Phys, Taichung 400, Taiwan

[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.56.15238

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present magnetotransport measurements on GaAs/AlxGa1-xAs multiple quantum wells doped with impurities at the centers of GaAs layers. Magnetic-field-induced insulator-quantum Hall conductor-insulator transitions with a well defined scaling behavior were observed. The critical exponents as well as the resistivities at the two critical magnetic fields are close to each ether. Their values are, however, different from the values obtained from similar studies performed on modulation-doped GaAs/AlxGa1-xAs heterostructures.

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页码：15238 / 15241

页数：4

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